Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design.
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Dongyun Chen | Najun Li | Qing-feng Xu | Hua Li | Jian‐mei Lu | Xue‐Feng Cheng | Xiang Hou | Erbo Shi | Shugang Xia | Jinghui He