Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x

We have achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field-effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates. To further investigate hole transport in these dual channel structures, we study the effects of strain, alloy scattering, and layer thickness on hole mobility enhancements in MOSFETs based upon these layers. We show that significant performance boosts can be obtained despite the effects of alloy scattering and that the best hole mobility enhancements are obtained for structures with thin Si surface layers.

[1]  E. Fitzgerald,et al.  Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy , 1993 .

[2]  Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications , 1998 .

[3]  M. J. Kearney,et al.  The effect of alloy scattering on the mobility of holes in a quantum well , 1998 .

[4]  F. M. Bufler,et al.  HOLE TRANSPORT IN STRAINED SI1-XGEX ALLOYS ON SI1-YGEY SUBSTRATES , 1998 .

[5]  J. Welser,et al.  Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors , 1994, IEEE Electron Device Letters.

[6]  Friedrich Schäffler,et al.  High-mobility Si and Ge structures , 1997 .

[7]  Mayank T. Bulsara,et al.  Dislocation dynamics in relaxed graded composition semiconductors , 1999 .

[8]  S. Laux,et al.  Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys , 1996 .

[9]  Bernard S. Meyerson,et al.  High hole mobility in SiGe alloys for device applications , 1994 .

[10]  G. Taraschi,et al.  Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates , 2001, IEEE Electron Device Letters.

[11]  Ulf Konig,et al.  High hole mobility in Si0.17Ge0.83 channel metal–oxide–semiconductor field-effect transistors grown by plasma-enhanced chemical vapor deposition , 2000 .

[12]  Jurgen Michel,et al.  Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .

[13]  J. Lai,et al.  Dislocation glide and blocking kinetics in compositionally graded SiGe/Si , 2001 .

[14]  Don Monroe,et al.  Relaxed GexSi1−x structures for III–V integration with Si and high mobility two‐dimensional electron gases in Si , 1992 .

[15]  Dimitri A. Antoniadis,et al.  Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates , 2001 .