Three-dimensional simulation of semiconductor devices: state of the art and prospects☆

Abstract In this paper we present a generalized model for electron transport in semiconductors accounting for three separate energy balance equations. Such a model generalizes the hydrodynamic and the electrothermal models, and comprises six partial differential equations, to be solved within the device domain with suitable boundary conditions. Next, we present simulation results obtained with a 3D code implementing a partial set of the above equations, which leads to a modified electrothermal model, and discuss the current status and future trends in multidimensional device simulation.