THE GROWTH AND ASSESSMENT OF GaAs EPITAXIAL LAYERS OBTAINED FROM Ga-As-Bi SOLUTIONS

X-Ray investigations of GaAs epitaxial layers obtained from Ga-As-Bi solutions with different amounts of bismuth are presented. An equilibrium cooling and two phase technique for the deposition of the GaAs epitaxial layers on semi-insulating GaAs:Cr(100) substrates has been used.