BANCMOS: a 25 V mixed analog-digital BiCMOS process

A 25-V mixed analog-digital BiCMOS process is presented that provides seven types of transistors (five bipolar, two MOS) with a linear polysilicon capacitor and polysilicon resistor in double-level metal using only 19 masks. Device and circuit performance is summarized. This manufacturable process with a large device set capable of 25-V operation and reasonable speed has proven itself useful for high-performance applications.<<ETX>>

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