The energy distribution of NBTI-induced hole traps in the Si band gap in PNO pMOSFETs

By applying a low temperature sweeping technique, we indentify the energy profile of recoverable hole traps for nitrided oxide and SiO2 pMOSFETs subject to Negative Bias Temperature Stress (NBTS). It is found that the energy distribution of hole traps for nitrided oxide devices has two obvious peaks, one in the lower and one in the upper half of the silicon band gap. Both peaks gradually develop with increasing the stress time and temperature. We attempt to compare the energy profile for nitrided oxide and SiO2 devices to identify the nitrogen effect on the hole traps generated under NBTS.

[1]  T. Grasser,et al.  Recovery-free electron spin resonance observations of NBTI degradation , 2010, 2010 IEEE International Reliability Physics Symposium.

[2]  T. Grasser,et al.  Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETs , 2009, IEEE Transactions on Electron Devices.

[3]  M. Denais,et al.  NBTI degradation: From physical mechanisms to modelling , 2006, Microelectron. Reliab..

[4]  W. B. Knowlton,et al.  On the thermal activation of negative bias temperature instability , 2009, 2009 IEEE International Integrated Reliability Workshop Final Report.

[5]  T. Grasser,et al.  Charging and Discharging of Oxide Defects in Reliability Issues , 2007, IEEE Transactions on Device and Materials Reliability.

[6]  Tibor Grasser,et al.  On the temperature and voltage dependence of short-term negative bias temperature stress , 2009, Microelectron. Reliab..

[7]  V. Huard.  Two independent components modeling for Negative Bias Temperature Instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[8]  Stefan Decker,et al.  Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen , 2010 .

[9]  A. Krishnan,et al.  Identification of the atomic-scale defects involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors , 2008 .

[10]  T. Grasser,et al.  The time dependent defect spectroscopy (TDDS) for the characterization of the bias temperature instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[11]  K. Ahmed,et al.  On the Physical Mechanism of NBTI in Silicon Oxynitride p-MOSFETs: Can Differences in Insulator Processing Conditions Resolve the Interface Trap Generation versus Hole Trapping Controversy? , 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

[12]  D. Ielmini,et al.  A New NBTI Model Based on Hole Trapping and Structural Relaxation in MOS Dielectrics , 2009, IEEE Transactions on Electron Devices.

[13]  Development of an Ultrafast On-the-Fly $I_{\rm DLIN}$ Technique to Study NBTI in Plasma and Thermal Oxynitride p-MOSFETs , 2008, IEEE Transactions on Electron Devices.

[14]  Direct Experimental Evidence of Hole Trapping in Negative Bias Temperature Instability , 2011 .

[15]  M. Nelhiebel,et al.  A two-stage model for negative bias temperature instability , 2009, 2009 IEEE International Reliability Physics Symposium.