Active inductor-based tunable impedance matching network for RF power amplifier application

This paper presents the use of a new structure of active inductor named cascoded flipped-active inductor (CASFAI) in a T-type high-pass tunable output matching network of a class-E RF power amplifier (RFPA) to control the output power and enhance the efficiency. The designed CASFAI behaves as an inductor in the frequency range of 0-6.9GHz, and has reached to a maximum quality factor of 4406, inductance value of 7.56nH, 3rd order harmonic distortion better than -30dB for 0dBm input power, while consumes only 2mW power. In order to consider the performance of the proposed active inductor-based tunable output matching network on the output power level and power added efficiency (PAE) of RFPA, the CASFAI is applied as a variable inductor to the output matching network of RFPA. The overall circuit is designed and validated in ADS in a 0.18?m CMOS process and 1.5V supply voltage. The results indicate that by increasing the inductance value of the matching network in constant operating frequency, the PAE peak moves from high power to low power levels without any degradation. Therefore, it is possible to maintain the power efficiency at the same maximum level for lower input drive levels. The use of a new CASFAI in a tunable matching network of a class-E RFPA is presented.The designed CASFAI behaves as an inductor in the frequency range of 0-6.9GHz.It has reached to a maximum quality factor of 4406 and inductance value of 7.56nH.The CASFAI is applied as a variable inductor to the output matching network of RFPA.The overall circuit is validated in a 0.18?m CMOS process and 1.5V supply voltage.

[1]  Kwyro Lee,et al.  A new linearization technique for MOSFET RF amplifier using multiple gated transistors , 2000 .

[2]  Mohammed Ismail,et al.  RF Bandpass Filter Design Based on , 2003 .

[3]  Alireza Saberkari,et al.  A novel 2.4 GHz CMOS class-E power amplifier with efficient power control for wireless communications , 2010, 2010 17th IEEE International Conference on Electronics, Circuits and Systems.

[4]  Alireza Saberkari,et al.  Design and comparison of flipped active inductors with high quality factors , 2014 .

[5]  Leonardo Pantoli,et al.  Class AB tunable active inductor , 2015 .

[6]  Jhin-Fang Huang,et al.  An ISM band CMOS power amplifier design for WLAN , 2006 .

[7]  A. Mortazawi,et al.  Improving Power Amplifier Efficiency and Linearity Using a Dynamically Controlled Tunable Matching Network , 2008, IEEE Transactions on Microwave Theory and Techniques.

[8]  Keiji Yoshida,et al.  A 2.4-GHz 0.18-μm CMOS Class E single-ended switching power amplifier with a self-biased cascode , 2010 .

[9]  Fei Yuan CMOS Active Inductors and Transformers: Principle, Implementation, and Applications , 2008 .

[10]  D. Selvathi,et al.  Design of Band Pass Filter using active inductor for RF receiver front-end , 2014, 2014 International Conference on Communication and Network Technologies.

[11]  Ockgoo Lee,et al.  A Dual-Mode CMOS RF Power Amplifier With Integrated Tunable Matching Network , 2012, IEEE Transactions on Microwave Theory and Techniques.

[12]  Kumar Narendra,et al.  Optimised high-efficiency Class E radio frequency power amplifier for wide bandwidth and high harmonics suppression , 2014, IET Circuits Devices Syst..

[13]  Yue Wu,et al.  A novel CMOS fully differential inductorless RF bandpass filter , 2000, 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353).

[14]  Leonardo Pantoli,et al.  Single transistor high linearity and wide dynamic range active inductor , 2015, Int. J. Circuit Theory Appl..

[15]  S. Malarvizhi,et al.  Design of low power low noise tunable active inductors for multiband RF front end communication circuits , 2013, 2013 International Conference on Communication and Signal Processing.

[16]  Fernando Rangel de Sousa,et al.  RF amplifier with automatic impedance matching system , 2011, 2011 IEEE Second Latin American Symposium on Circuits and Systems (LASCAS).

[17]  Narendra Kumar A L Aridas High Efficiency Broadband Parallel-Circuit Class E RF Power Amplifier with Reactance Compensation Technique , 2008 .

[18]  Sheng-Lyang Jang,et al.  A small die area and wide locking range CMOS frequency divider , 2008 .

[19]  R.G. Carvajal,et al.  Comparison of conventional and new flipped voltage structures with increased input/output signal swing and current sourcing/sinking capabilities , 2005, 48th Midwest Symposium on Circuits and Systems, 2005..