Tolerancing of diffraction-limited Kirkpatrick-Baez synchrotron beamline optics for extreme-ultraviolet metrology.

The recent interest in extreme-ultraviolet (EUV) lithography has led to the development of an array of at-wavelength metrologies implemented on synchrotron beamlines. These beamlines commonly use Kirkpatrick-Baez (K-B) systems consisting of two perpendicular, elliptically bent mirrors in series. To achieve high-efficiency focusing into a small spot, unprecedented fabrication and assembly tolerance is required of these systems. Here we present a detailed error-budget analysis and develop a set of specifications for diffraction-limited performance for the K-B optic operating on the EUV interferometry beamline at Lawrence Berkeley National Laboratory's Advanced Light Source. The specifications are based on code v modeling tools developed explicitly for these optical systems. Although developed for one particular system, the alignment sensitivities presented here are relevant to K-B system designs in general.

[1]  Donald M. Tennant,et al.  Alignment of a multilayer‐coated imaging system using extreme ultraviolet Foucault and Ronchi interferometric testing , 1995 .

[2]  Eric M. Gullikson Scattering from normal-incidence EUV optics , 1998, Advanced Lithography.

[3]  J. H. Underwood,et al.  Generation of a parallel X-ray beam and its use for testing collimators , 1977 .

[4]  Kenneth A. Goldberg,et al.  Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral regions , 1999 .

[5]  A. A. MacDowell,et al.  Phase‐measuring interferometry using extreme ultraviolet radiation , 1995 .

[6]  J. Bokor,et al.  Phase-shifting point diffraction interferometer. , 1996, Optics letters.

[7]  J. Underwood,et al.  Layered synthetic microstructures as Bragg diffractors for X rays and extreme ultraviolet: theory and predicted performance. , 1981, Applied optics.

[8]  R. H. Stulen,et al.  Extreme ultraviolet lithography , 1999 .

[9]  H. Padmore,et al.  Theory and practice of elliptically bent x-ray mirrors , 2000 .

[10]  M. Howells,et al.  Design considerations for adjustable-curvature, high-power, x-ray mirrors based on elastic bending , 1993 .

[11]  N. Ceglio,et al.  Undulator radiation for at-wavelength interferometry of optics for extreme-ultraviolet lithography. , 1993, Applied optics.

[12]  Eric M. Gullikson,et al.  Beamline for measurement and characterization of multilayer optics for EUV lithography , 1998, Advanced Lithography.

[13]  Franco Cerrina,et al.  SHADOW: A synchrotron radiation ray tracing program , 1986 .

[14]  Jeffrey Bokor,et al.  Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks , 1999 .

[15]  J. Bokor,et al.  At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems. , 2000, Applied optics.

[16]  Kenneth A. Goldberg,et al.  Characterization of an EUV Schwarzschild objective using phase-shifting point diffraction interferometry , 1997, Advanced Lithography.

[17]  P. Kirkpatrick,et al.  Formation of optical images by X-rays. , 1948, Journal of the Optical Society of America.

[18]  W. Ehrenberg,et al.  X-ray optics; the production of converging beams by total reflection. , 1949, Journal of the Optical Society of America.