Electrical Characteristics Of Amorphous Ni36W64 Contacts On Silicon

The Schottky barrier heights of amorphous Ni36W64 film contacts on n-type and p-type silicon are 0.65 eV and 0.45 eV, respectively. The barrier heights stay constant up to 550°C for a 30 min annealing in vacuum, but the interface, the leakage current, and the ideality factors degrade at 450°C. The contact resistivities of amorphous Ni-W films is (1.4 ± 0.3) 10-6 Ωcm2 on n+Si and (8.9 ± 0.2) 10-7 0cm2 on p+Si. The values remain stable after vacuum annealing for 30 min up to 600°C.

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