First-principles theoretical analysis of silyl radical diffusion on silicon surfaces.
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[1] E. Aydil,et al. Atomistic calculation of the SiH3 surface reactivity during plasma deposition of amorphous silicon thin films , 2004 .
[2] A. Gallagher,et al. Surface reaction probability of film‐producing radicals in silane glow discharges , 1990 .
[3] David M. Tanenbaum,et al. Surface roughening during plasma-enhanced chemical-vapor deposition of hydrogenated amorphous silicon on crystal silicon substrates , 1997 .
[4] R. Tscharner,et al. Photovoltaic technology: the case for thin-film solar cells , 1999, Science.
[5] E. Aydil,et al. Interactions of SiH radicals with silicon surfaces: An atomic-scale simulation study , 1998 .
[6] K. Gleason,et al. Monte Carlo simulations of amorphous hydrogenated silicon thin‐film growth , 1987 .
[7] D. Vanderbilt,et al. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism. , 1990, Physical review. B, Condensed matter.
[8] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[9] Dimitrios Maroudas,et al. Thermally activated mechanisms of hydrogen abstraction by growth precursors during plasma deposition of silicon thin films. , 2005, The Journal of chemical physics.
[10] Eray S. Aydil,et al. Mechanism of hydrogen-induced crystallization of amorphous silicon , 2002, Nature.
[11] J. Robertson,et al. Surface diffusion of SiH3 radicals and growth mechanism of a-Si:H and microcrystalline Si , 2003 .
[12] E. Aydil,et al. Temperature dependence of precursor-surface interactions in plasma deposition of silicon thin films , 2005 .
[13] B. Rech,et al. Recent developments in amorphous silicon‐based solar cells , 1996 .
[14] Ahm Arno Smets,et al. Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growth , 2003 .
[15] Chuang‐Chuang Tsai,et al. Film formation mechanisms in the plasma deposition of hydrogenated amorphous silicon , 1986 .
[16] T. Arias,et al. Iterative minimization techniques for ab initio total energy calculations: molecular dynamics and co , 1992 .
[17] E. Aydil,et al. Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation , 2001 .
[18] Maeda,et al. Mechanism of surface reaction in the deposition process of a-Si:H by rf glow discharge. , 1995, Physical review. B, Condensed matter.
[19] G. Henkelman,et al. A climbing image nudged elastic band method for finding saddle points and minimum energy paths , 2000 .
[20] M. Terrones,et al. Creation of helical vortices during magnetization of aligned carbon nanotubes filled with Fe: theory and experiment. , 2005, Physical review letters.
[21] Dimitrios Maroudas,et al. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films , 2001 .
[22] O. Ukai,et al. Molecular-Dynamics Simulations of Hydrogenated Amorphous Silicon Thin-Film Growth , 1995 .
[23] R. Robertson,et al. Mono‐ and disilicon radicals in silane and silane‐argon dc discharges , 1986 .
[24] E. Aydil,et al. In situ probing and atomistic simulation of a-Si:H plasma deposition , 2001 .
[25] G. Parsons,et al. Surface transport kinetics in low-temperature silicon deposition determined from topography evolution , 2001 .
[26] Alan Gallagher,et al. Neutral radical deposition from silane discharges , 1988 .
[27] R. L. Naone,et al. Silicon hydride composition of plasma-deposited hydrogenated amorphous and nanocrystalline silicon films and surfaces , 1998 .
[28] Aneesur Rahman,et al. Correlations in the Motion of Atoms in Liquid Argon , 1964 .
[29] Growth mechanism of hydrogenated amorphous silicon studied by in situ scanning tunneling microscopy , 1999 .
[30] Ahm Arno Smets,et al. In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma , 1999 .
[31] R. Gottscho,et al. Use of Plasma Processing in Making Integrated Circuits and Flat-Panel Displays , 1996 .
[32] E. Aydil,et al. Surface hydride composition of plasma deposited hydrogenated amorphous silicon: in situ infrared study of ion flux and temperature dependence , 2003 .