High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator
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Hiromichi Ohashi | Hajime Okumura | Yoshiki Yano | Shuichi Yagi | Nakao Akutsu | H. Ohashi | Y. Yamamoto | M. Shimizu | H. Okumura | Y. Yano | Y. Yamamoto | Mitsuaki Shimizu | S. Yagi | M. Inada | G. Piao | N. Akutsu | Guanxi Piao | Masaki Inada
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