Effects of atomistic defects on coherent electron transmission in Si nanowires: Full band calculations

The effects of atomistic imperfections on coherent electron transmission in Si[100] quantum wires a few nanometers wide are investigated using a tight-binding Green function approach. We find a significant suppression in the electron transmission by atomistic imperfections in these extremely narrow wires. Multiple conductance peaks or oscillations can be easily developed by the presence of only several vacancy defects, which can lead to a finite zero-conductance region around the subband edge. Several substitutional defects and surface dangling bonds generally result in decreased, oscillatory conductances with more significant effects found in narrower wires.

[1]  Effect of wire length on Coulomb blockade in ultrathin wires of recrystallized hydrogenated amorphous silicon , 1999 .

[2]  P. Vogl,et al.  Theory of Substitutional Deep Traps in Covalent Semiconductors , 1980 .

[3]  Lee,et al.  Transport through a strongly interacting electron system: Theory of periodic conductance oscillations. , 1991, Physical review letters.

[4]  Bagwell.  Evanescent modes and scattering in quasi-one-dimensional wires. , 1990, Physical review. B, Condensed matter.

[5]  Eric S. Snow,et al.  Fabrication of nanometer‐scale side‐gated silicon field effect transistors with an atomic force microscope , 1995 .

[6]  M. P. Anantram,et al.  Conductance of carbon nanotubes with disorder: A numerical study , 1998 .

[7]  Fabio Beltram,et al.  Empirical spds^* tight-binding calculation for cubic semiconductors : general method and material parameters , 1998 .

[8]  Energy Eigenvalues and Quantized Conductance Values of Electrons in Si Quantum Wires on \mb{100\mb} Plane , 1995 .

[9]  Kazuo Yano,et al.  Room-temperature single-electron memory , 1994 .

[10]  H. Wong,et al.  CMOS scaling into the nanometer regime , 1997, Proc. IEEE.

[11]  Chang,et al.  Theory of optical properties of quantum wires in porous silicon. , 1992, Physical review. B, Condensed matter.

[12]  T. Makino,et al.  Fabrication of 2-nm-wide silicon quantum wires through a combination of a partially-shifted resist pattern and orientation-dependent etching , 1997 .

[13]  S. Tans,et al.  Room-temperature transistor based on a single carbon nanotube , 1998, Nature.

[14]  Stephen Y. Chou,et al.  Nanoscale silicon field effect transistors fabricated using imprint lithography , 1997 .

[15]  M. Sancho,et al.  Highly convergent schemes for the calculation of bulk and surface Green functions , 1985 .

[16]  Herbert Shea,et al.  Single- and multi-wall carbon nanotube field-effect transistors , 1998 .

[17]  S. Datta.  Electronic transport in mesoscopic systems , 1995 .

[18]  Yasuo Takahashi,et al.  Fabrication of a silicon quantum wire surrounded by silicon dioxide and its transport properties , 1994 .

[19]  R. A. Smith,et al.  Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire , 1997 .

[20]  R. A. Webb,et al.  Mesoscopic phenomena in solids , 1991 .