Inhomogeneity of liquid‐phase‐epitaxial InGaAsP lattice matched on InP: Effects of transient growth

Band‐gap and lattice constant data are presented characterizing the transient composition that occurs at the onset of liquid‐phase‐epitaxial growth of InGaAsP on InP substrates. This compositional inhomogeneity, a region of significantly different band gap and lattice constant than that of the remainder of the layer, is a result of the extreme nonequilibrium conditions that exist in the first milliseconds of growth. The consequences of a thin, strained, and band‐gap‐graded layer within a practical device are considered, and a method of producing crystals free of this basic inhomogeneity is demonstrated. The data permit a calculation of the changes in solidus atomic fraction of each atomic species present in the diffusion‐limited growth, clarifying some aspects of incorporation kinetic effects. A mechanism for the transient growth is considered, based on new data and data of previous work.

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