Selectivity studies and oxygen dependence of tin(IV) oxide-based gas sensors

In a previous paper we described the production of two semiconductor gas sensors based on tin(IV) oxide. One exhibits sensitivity to the presence of carbon monoxide but shows no response to the presence of methane. The second sensor exhibits selectivity opposite to this. These have now been greatly improved. The resistance in clean air of the CO-selective sensor can be reduced by a factor of up to 200 by introducing small amounts of Sb2O3 (0.2–2%). Production of the CH4-selective device can be improved by introducing a pre-sintering stage. Further study on the tin oxide/bismuth oxide system, responsible for the selectivity shown by the CO sensor, has led to the production of a third selective sensor which is sensitive to the presence of hydrogen but shows no response to the presence of either carbon monoxide or methane. Results obtained from a study of other tin oxide-containing systems will also be outlined. A study of the effect of low oxygen concentrations has shown that changes in resistance of up to 104 can be observed in 1% v/v contaminant gases.

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