Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1−xAs1−yNy (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07–0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations.

[1]  C. Tu,et al.  GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beam epitaxy , 1998 .

[2]  Shun Sato,et al.  Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition , 1997 .

[3]  Eric Daniel Jones,et al.  Band structure of In x Ga 1-x As 1-y N y alloys and effects of pressure , 1999 .

[4]  Shunichi Sato,et al.  Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAs for long-wavelength laser diodes , 1998 .

[5]  Daniel J. Friedman,et al.  Photocurrent of 1 eV GaInNAs lattice-matched to GaAs , 1998 .

[6]  T. Kitatani,et al.  Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance , 1996 .

[7]  Umesh K. Mishra,et al.  “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells , 1998 .

[8]  R. J. Nelson,et al.  Minority‐carrier lifetimes and internal quantum efficiency of surface‐free GaAs , 1978 .

[9]  Petr G. Eliseev,et al.  BLUE TEMPERATURE-INDUCED SHIFT AND BAND-TAIL EMISSION IN INGAN-BASED LIGHT SOURCES , 1997 .

[10]  Foxon,et al.  Giant oscillator strength of free excitons in GaAs. , 1987, Physical review. B, Condensed matter.

[11]  Eric Daniel Jones,et al.  InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs , 1999 .

[12]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .

[13]  Guangde Chen,et al.  Time-resolved photoluminescence studies of InGaN epilayers , 1996 .

[14]  Oueslati,et al.  Resonant Raman scattering on localized states due to disorder in GaAs1-xPx alloys. , 1988, Physical review. B, Condensed matter.

[15]  Sarah R. Kurtz,et al.  1-eV solar cells with GaInNAs active layer , 1998 .

[16]  A. Rose,et al.  A physical interpretation of dispersive transport in disordered semiconductors , 1981 .

[17]  C. Gourdon,et al.  Exciton Transfer between Localized States in CdS1–xSex Alloys , 1989 .

[18]  K. Uomi,et al.  GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes , 1998, IEEE Photonics Technology Letters.

[19]  Markus Weyers,et al.  Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers , 1992 .