Window layer for current spreading in AlGaInP light‐emitting diode

The current spreading effect and other characteristics of an AlGaInP double‐heterojunction (DH) light‐emitting diode (LED) were investigated via numerical calculation and experimental results. The finite difference method was employed to numerically solve the two‐dimensional steady‐state equations of a semiconductor device. Poisson’s equation and two continuity equations were approximated by a set of equations under the assumption that the hole and electron current components along the mesh lines are constant between two neighboring mesh points. Additionally, the DH structure was modified to a simple p‐n junction model, in light of the fact that the former does not contribute significantly to the current spreading effect. Furthermore, a comparison of the measured light intensities from LEDs with the calculated current densities revealed a sufficient correlation. Experimental results indicated that a 10‐μm‐thick window layer with a carrier concentration at 2×1018 cm−3 would be adequate for an optimum device.

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