InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
暂无分享,去创建一个
[2] Kaoru Inoue,et al. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates , 1991 .
[3] Harry H. Wieder,et al. Lattice tilt and dislocations in compositionally step‐graded buffer layers for mismatched InGaAs/GaAs heterointerfaces , 1992 .
[4] Jianhui Chen,et al. Strain relaxation of compositionally graded InxGa1-xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructures , 1992 .
[5] E. Calleja,et al. Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation‐free (<105 cm−2) and unstrained epilayers , 1994 .
[6] Growth of the (In,Al,Ga)As quaternary alloy system on GaAs at low substrate temperatures by molecular‐beam epitaxy , 1994 .
[7] A. J. Howard,et al. X‐ray reciprocal‐space mapping of strain relaxation and tilting in linearly graded InAlAs buffers , 1996 .
[8] Ray-Ming Lin,et al. Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates , 1996 .
[9] Elastic misfit stress relaxation in In0.25Ga0.75As layers grown under tension on InP(0 0 1) , 1997 .