Benchmarking time-dependent variability of junctionless nanowire FETs

Time-dependent variability of junctionless gate-all-around nanowire pFETs is studied through measurements and simulations. The variability, related to effects such as Random Telegraph Noise (RTN) and Bias Temperature Instability (BTI), is discussed in terms of the distribution of individual charged gate oxide trap threshold voltage shifts. This distribution is shown to be shaped by i) the electrostatics of the device, and ii) percolative source-drain conduction. It is concluded that the time dependent variability of our JL GAA NW pFETs is comparable to previously measured pFinFETs. However, provided that other sources of variability are suppressed, JL FETs time-zero and time-dependent variability may remain high due to the high body doping.

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