Measurement-Based Automatic Extraction of FET Parasitic Network by Linear Regression

A fully automatic procedure for the empirical extraction of field-effect transistors (FETs) parasitic network is proposed. By exploiting a grid search approach combined with linear regression, the identification requires Y-parameter measurements at a very few (even just one) bias points. The method is verified in simulation and applied to measurements of a 250-nm GaN high-electron-mobility transistor (HEMT).

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