Selected area laser-crystallized polycrystalline silicon thin films by a pulsed Nd:YAG laser with 355 nm wavelength

Selected area laser-crystallized polycrystalline silicon (p-Si) thin films were prepared by the third har- monics (355 nm wavelength) generated by a solid-state pulsed Nd:YAG laser. Surface morphologies of 400 nm thick films after laser irradiation were analyzed. Raman spectra show that film crystallinity is improved with in- crease of laser energy. The optimum laser energy density is sensitive to the film thickness. The laser energy density for efficiently crystallizing amorphous silicon films is between 440-634 mJ/cm 2 for 300 nm thick films and be- tween 777-993 mJ/cm 2 for 400 nm thick films. The optimized laser energy density is 634, 975 and 1571 mJ/cm 2 for 300, 400 and 500 nm thick films, respectively.

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