STM observation of initial growth of Sn atoms on Ge(0 0 1) surface

[1]  X. Gong,et al.  Strain effect on adatom binding and diffusion in homo- and heteroepitaxies of Si and Ge on ( 001) Surfaces. , 2004 .

[2]  A. Janotti,et al.  Two-atom structures of Ge on Si(100): dimers versus adatom pairs. , 2001, Physical Review Letters.

[3]  Swartzentruber,et al.  Diffusional kinetics of SiGe dimers on Si(100) using atom-tracking scanning tunneling microscopy , 2000, Physical review letters.

[4]  C. Ordás,et al.  Formation and decay of metastable Ge clusters on Ge(001) , 2000 .

[5]  K. Ho,et al.  Correlated piecewise diffusion of a Ge ad-dimer on the Si(001) surface , 2000 .

[6]  M. Lagally,et al.  Formation of chain and V-shaped structures in the initial stage growth of Si/Si(100) , 2000 .

[7]  Zandvliet,et al.  Diffusion driven concerted motion of surface atoms: Ge on Ge(001) , 2000, Physical review letters.

[8]  Swartzentruber,et al.  Scanning tunneling microscopy identification of atomic-scale intermixing on Si(100) at submonolayer Ge coverages , 2000, Physical review letters.

[9]  G. P. Srivastava Ab initio pseudopotential calculations for electronic and geometric structure of mixed Si–Ge dimers on the Si(001)-(1×2) and Si(001)-(2×4) surfaces , 1999 .

[10]  Tomoshige Sato,et al.  Detection of the flip-flop motion of buckled dimers on a Ge(001) surface by STM , 1999 .

[11]  Michael Krueger,et al.  PIECEWISE DIFFUSION OF THE SILICON DIMER , 1999 .

[12]  J. Nogami,et al.  Growth of Sn on Si(001) at room temperature , 1998 .

[13]  Lagally,et al.  Adatom pairing structures for Ge on si(100): the initial stage of island formation , 1997, Science.

[14]  B. Poelsema,et al.  Dynamics and energetics of Si-ad-dimers and ad-dimer clusters on Ge(100) , 1997 .

[15]  J. Tani,et al.  Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si(001)2×1 , 1997 .

[16]  G. Abstreiter,et al.  Self-assembled growth of Sn on Ge (001) , 1997 .

[17]  P. Scholte,et al.  Room-temperature growth of submonolayers of silicon on Si(001) studied with scanning tunneling microscopy , 1997 .

[18]  G. Falkenberg,et al.  Structure and morphology of In on Ge(001) studied by scanning tunneling microscopy , 1997 .

[19]  Yamasaki,et al.  Initial process of Si homoepitaxial growth on Si(001). , 1996, Physical review letters.

[20]  R. Cinti,et al.  Submonolayer Pb deposition on Si(100) studied by scanning tunneling microscopy , 1996 .

[21]  Swartzentruber,et al.  Direct measurement of surface diffusion using atom-tracking scanning tunneling microscopy. , 1996, Physical review letters.

[22]  Johansson,et al.  Mixed Ge-Si dimer growth at the Ge/Si(001)-(2 x 1) surface. , 1995, Physical Review Letters.

[23]  Cho,et al.  Superstructures of the Pb/Ge(001) system. , 1995, Physical review. B, Condensed matter.

[24]  R. Tibshirani,et al.  An Introduction to the Bootstrap , 1995 .

[25]  Kelly,et al.  Adsorption of Al on Si(100): A surface polymerization reaction. , 1993, Physical review letters.

[26]  Quate,et al.  Aluminum on the Si(100) surface: Growth of the first monolayer. , 1991, Physical review. B, Condensed matter.

[27]  C. Quate,et al.  Evolution of the Si(100)‐2×2‐In reconstruction , 1991 .

[28]  C. Quate,et al.  Gallium growth and reconstruction on the Si(100) surface , 1990 .

[29]  Becker,et al.  Tunneling microscopy of Ge(001). , 1987, Physical review. B, Condensed matter.

[30]  H. Gossmann Initial stages of interface formation in group IV-IV systems: Sn ON Ge(100) and Ge(111) , 1987 .