论文信息 - Interface roughness scattering in GaAs/AlAs quantum wells

Interface roughness scattering in GaAs/AlAs quantum wells

We study experimentally and theoretically the influence of interface roughness on the mobility of two‐dimensional electrons in modulation‐doped AlAs/GaAs quantum wells. It is shown that interface roughness scattering is the dominant scattering mechanism in thin quantum wells with a well thickness Lw<60 A, where electron mobilities are proportional to L6w, reaching 2×103 cm2/V s at Lw∼55 A. From detailed comparison between theory and experiment, it is determined that the ‘‘GaAs‐on‐AlAs’’ interface grown by molecular beam epitaxy has a roughness with the height of 3–5 A and a lateral size of 50–70 A.

H. Sakaki | Takeshi Noda | K. Hirakawa | Masaaki Tanaka | T. Matsusue

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