论文信息 - Spin-resolved study of direct band-gap recombination in bulk Ge

Spin-resolved study of direct band-gap recombination in bulk Ge

Recent investigations have demonstrated how temperature and doping can be employed as effective turning knobs to fully control the angular momentum of the photons emitted at the direct gap recombination of carriers with optically oriented spin in bulk Germanium. Here we emphasize how cooling of hot electrons via Coulomb collisions and intervalley scattering affect spin distribution within the conduction band, and explore the role of an additional degree of freedom, namely the excitation power density, in contributing to the electron spin relaxation.

[1] M. Guzzi,et al. Optical spin injection and spin lifetime in Ge heterostructures. , 2011, Physical review letters.

[2] Hanan Dery,et al. Intrinsic Spin Lifetime of Conduction Electrons in Germanium , 2012 .

[3] R. Soref. Mid-infrared photonics in silicon and germanium , 2010 .

[4] J. Michel,et al. High-performance Ge-on-Si photodetectors , 2010 .

[5] Di Liang,et al. Recent progress in lasers on silicon , 2010 .

[6] S. Sarma,et al. Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.

[7] A. Smirl,et al. Hole spin relaxation and intervalley electron scattering in germanium , 2011 .

[8] Jakob Birkedal Wagner,et al. Radiative recombination in heavily doped p -type germanium , 1984 .

[9] Zhou,et al. Femtosecond kinetics of photoexcited carriers in germanium. , 1994, Physical review. B, Condensed matter.

[10] B. Lax,et al. Exciton and Magneto-Absorption of the Direct and Indirect Transitions in Germanium , 1959 .

[11] Planel,et al. Exciton formation and hole-spin relaxation in intrinsic quantum wells. , 1994, Physical review. B, Condensed matter.

[12] Ron Jansen,et al. Silicon spintronics. , 2012, Nature materials.

[13] E. Collett. Field Guide to Polarization , 2005 .

[14] Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells , 2013 .

[15] J. Barrau,et al. Determination experimentale du coefficient de formation d'excitons dans le silicium , 1973 .