Nanobelts of the dielectric material Ge3N4

Ge3N4 nanobelts 30–300 nm in width were synthesized by thermal reduction of a mixed Ge+SiO2 powder in NH3 atmosphere. These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. In these synthesized nanobelts, the existence of α and β phases of Ge3N4 was identified. The α phase exhibiting slight difference from an ideal α-Ge3N4 phase was also found in the present Ge3N4 material. The mechanism of formation of the Ge3N4 nanobelts is discussed.

[1]  T. Kang,et al.  Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy , 2001 .

[2]  Shui-Tong Lee,et al.  Oxide-assisted growth and optical characterization of gallium-arsenide nanowires , 2001 .

[3]  Zhong Lin Wang,et al.  Nanobelts of Semiconducting Oxides , 2001, Science.

[4]  O. Terasaki,et al.  Template synthesis of asymmetrically mesostructured platinum networks. , 2001, Journal of the American Chemical Society.

[5]  R. S. Johnson,et al.  New approach for the fabrication of device-quality Ge/GeO2/SiO2 interfaces using low temperature remote plasma processing , 2000 .

[6]  Shui-Tong Lee,et al.  Yttrium–barium–copper–oxygen nanorods synthesized by laser ablation , 2000 .

[7]  Ning Wang,et al.  Germanium nanowires sheathed with an oxide layer , 2000 .

[8]  Mauricio Terrones,et al.  Enhanced magnetic coercivities in Fe nanowires , 1999 .

[9]  Z. Zhang,et al.  Crystal growth. , 1999, Proceedings of the National Academy of Sciences of the United States of America.

[10]  Bing-Lin Gu,et al.  SYNTHESIS OF SILICON NITRIDE NANORODS USING CARBON NANOTUBE AS A TEMPLATE , 1997 .

[11]  S. Fan,et al.  Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction , 1997 .

[12]  M. Esashi,et al.  Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy , 1997 .

[13]  Charles M. Lieber,et al.  Nanorod-Superconductor Composites: A Pathway to Materials with High Critical Current Densities , 1996, Science.

[14]  Z. Hu,et al.  Morphology and growth characteristics of Si3N4 whiskers made by pyrolysis of amorphous Si-N-C powders , 1996, Journal of Materials Science.

[15]  Steven G. Louie,et al.  Boron Nitride Nanotubes , 1995, Science.

[16]  Charles M. Lieber,et al.  Synthesis and characterization of carbide nanorods , 1995, Nature.

[17]  R. Tenne,et al.  High-Rate, Gas-Phase Growth of MoS2 Nested Inorganic Fullerenes and Nanotubes , 1995, Science.

[18]  R. Tenne,et al.  Polyhedral and cylindrical structures of tungsten disulphide , 1992, Nature.

[19]  I. Mihailescu,et al.  Direct laser synthesis of thin silicon and germanium nitride/oxynitride layers , 1992 .

[20]  S. Iijima.  Helical microtubules of graphitic carbon , 1991, Nature.

[21]  G. A. Johnson,et al.  Plasma-deposited germanium nitride gate insulators for indium phosphide metal-insulator-semiconductor field-effect transistors , 1991 .

[22]  K. Pande,et al.  A GaAs MISFET with Ge3N4 gate dielectric , 1982 .

[23]  K. Pande.  Electrical characteristics and memory behavior of Ge3N4GaAs MIS devices , 1982 .

[24]  K. Pande,et al.  Interface characteristics of Ge3N4-(n-type) GaAs MIS devices , 1981 .

[25]  A. Howie,et al.  Electron Microscopy of Thin Crystals , 1977, Nature.

[26]  S. N. Ruddlesden,et al.  On the crystal structure of the nitrides of silicon and germanium , 1958 .

[27]  Y. Bando,et al.  The microstructural analysis of SiC nanorods by high-resolution electron microscopy. , 2000, Journal of electron microscopy.

[28]  T. Ekström,et al.  Nucleation and growth of the elongated α′-SiAlON , 1997 .

[29]  I. Barin.  Thermochemical data of pure substances , 1989 .