Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1 Ti0.9)O3 Thin Films for Ferroelectric Random Access Memory Applications

Ferroelectric thin films of SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub> (SBT) or bilayered SrBi<sub>2</sub>Ta<sub>2</sub>O<sub>9</sub>/Ba(Zr<sub>0.1</sub>Ti<sub>0.9</sub>)O<sub>3</sub> (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 muC/cm<sup>2</sup> and a coercive field of and 130 kV/cm.

[1]  Cheng-Fu Yang,et al.  Effects of Laser Annealing on the Electrical Characteristics of Dynamic Random Access Memory Using (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films , 2007 .

[2]  I. Coondoo,et al.  Investigations of structural, dielectric and ferroelectric behavior of europium substituted SrBi2Ta2O9 ferroelectric ceramics , 2007 .

[3]  Hyung‐Ho Park,et al.  Stacking effect on the ferroelectric properties of PZT/PLZT multilayer thin films formed by photochemical metal-organic deposition , 2004 .

[4]  P. Bhattacharya,et al.  Leakage current behavior of SrBi2Ta2O9 ferroelectric thin films on different bottom electrodes , 2002 .

[5]  Z. Fu,et al.  Electrical characterization of Ta2O5 films deposited by laser reactive ablation of metallic Ta , 1999 .

[6]  Shen,et al.  Size-related ferroelectric-domain-structure transition in a polycrystalline PbTiO3 thin film. , 1996, Physical review. B, Condensed matter.

[7]  H. Ishiwara,et al.  Preparation and characterization of PZT thin films on CeO2(111)/Si(111) structures , 1996 .

[8]  Tadahiko Hirai,et al.  Crystal and Electrical Characterizations of Epitaxial CeXZr1-XO2 Buffer Layer for the Metal/Ferroelectric/Insulator/Semiconductor Field Effect Transistor , 1996 .

[9]  Hidekazu Tanaka,et al.  Formation of Bi-based Layered Perovskite Oxide Films by a Laser Ablation Technique , 1995 .

[10]  Kazushi Amanuma,et al.  Preparation and ferroelectric properties of SrBi2Ta2O9 thin films , 1995 .

[11]  Donald R. Lampe,et al.  Integration of ferroelectric thin films into nonvolatile memories , 1992 .

[12]  J. Gerblinger,et al.  Electrical conductivity of sputtered films of strontium titanate , 1990 .

[13]  R. Katiyar,et al.  ferroelectric thin films on different bottom electrodes , 2002 .

[14]  W. Geideman.  Progress in ferroelectric memory technology , 1991, IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control.