论文信息 - Favourable photovoltaic effects in InGaN pin homojunction solar cell

Favourable photovoltaic effects in InGaN pin homojunction solar cell

InGaN pin homojunction solar cells with different In content (x=0.02/0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.

[1] John F. Muth,et al. Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements , 1997 .

[2] Hiroshi Harima,et al. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap. , 2002 .

[3] Hiroshi Harima,et al. Optical bandgap energy of wurtzite InN , 2002 .

[4] Eugene E. Haller,et al. Unusual properties of the fundamental band gap of InN , 2002 .

[5] Yoshiki Saito,et al. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys , 2003 .

[6] Ahmed S. Bouazzi,et al. Theoretical possibilities of InxGa1-xN tandem PV structures , 2005 .

[7] S. Kurtz,et al. 50% Efficient Solar Cell Architectures and Designs , 2006, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference.

[8] Jinmin Li,et al. Photovoltaic effects in InGaN structures with p–n junctions , 2007 .

[9] Ian T. Ferguson,et al. Design and characterization of GaN∕InGaN solar cells , 2007 .

[10] Umesh K. Mishra,et al. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap , 2008 .

[11] Ray-Hua Horng,et al. High-quality InGaN∕GaN heterojunctions and their photovoltaic effects , 2008 .

[12] Lester F. Eastman,et al. Growth, fabrication, and characterization of InGaN solar cells , 2008 .

[13] Jianwu Sun,et al. Substantial photo-response of InGaN p–i–n homojunction solar cells , 2009 .