Modeling of low-frequency noise in GaInP/GaAs hetero-bipolar transistors

Accurate low-frequency noise modeling is a prerequisite for oscillator phase-noise simulation. In this paper, the LF noise sources of GaInP/GaAs HBTs are investigated. It turns out that the 1/f-noise model must contain two sources, the base-emitter diode and the emitter resistance. Quantitatively, excess noise power at 100 kHz scales with the square of collector current-density.

[1]  Bumman Kim,et al.  Extraction of low-frequency noise model of self-aligned AlGaAs/GaAs heterojunction bipolar transistor , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

[2]  Hiroyuki Matsuura,et al.  A power combined W-band HBT oscillator , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[3]  J. Graffeuil,et al.  1/f noise in self-aligned Si/SiGe heterojunction bipolar transistor , 1995, IEEE Electron Device Letters.

[4]  Milton Feng,et al.  Impact of 1/f noise in Ka-band InGaP/GaAs HBT frequency sources , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[5]  P. Heymann,et al.  An HBT noise model valid up to transit frequency , 1999, IEEE Electron Device Letters.

[6]  W. Heinrich,et al.  Low phase-noise GaInP/GaAs-HBT MMIC oscillators up to 36 GHz , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

[7]  C. Delseny,et al.  Excess noise in AlGaAs/GaAs heterojunction bipolar transistors and associated TLM test structures , 1994 .

[8]  T.G.M. Kleinpenning,et al.  Low-frequency noise in modern bipolar transistors: impact of intrinsic transistor and parasitic series resistances , 1994 .

[9]  Mau-Chung Frank Chang,et al.  GaInP/GaAs HBT's for high-speed integrated circuit applications , 1993 .