High-productivity mask writer with broad operating range

Photomask complexity increases rapidly as semiconductor devices continue to shrink and as optical proximity correction becomes commonplace. This trend stresses the performance of mask pattern generators due to the increase in both primary and subresolution features. However, the next-generation MEBES raster scan architecture is well-suited to the challenge of maintaining throughput regardless of increases in pattern complexity. In addition, this new system provides an operating envelope that is sufficiently broad to expose all practical resist materials with a fixed number of writing passes. Write time is independent of material sensitivity, which has the benefits of allowing high-dose processes to be optimized, and also of supporting a wide selection of chemically amplified resist candidates for critical mask patterning. The new system shows the promise of being extendible to the 70 nm technology generation.

[1]  Byeong-soo Kim,et al.  The emergence of assist feature OPC era in sub-130nm DRAM devices , 2001 .

[2]  Mi-Chang Chang,et al.  OPC methodology and implementation to prototyping of small SRAM cells of 0.18-μm node logic gate levels , 2000, Advanced Lithography.

[3]  Lars W. Liebmann,et al.  Optimizing style options for subresolution assist features , 2001, SPIE Advanced Lithography.

[4]  Warren Montgomery,et al.  Photoresist processing for high-resolution DUV lithography at 257 nm , 2001, Photomask Japan.

[5]  Charles A. Sauer,et al.  Improving CDs on a MEBES system by improving the ZEP 7000 development and dry etch process , 1999, Photomask Technology.

[6]  A. N. Broers,et al.  Tolerance on alignment error in GHOST proximity effect correction , 1993 .

[7]  Kent H. Nakagawa,et al.  Practical technology path to sub-0.10-μm process generations via enhanced optical lithography , 1999, Photomask Technology.

[8]  Frank E. Abboud,et al.  Lithographic performance results for a new 50-kV electron-beam mask writer , 2001, SPIE Photomask Technology.

[9]  Frank E. Abboud,et al.  Electrodynamics of fast beam blankers , 1993 .

[10]  Frank E. Abboud,et al.  Design considerations for an electron-beam pattern generator for the 130-nm generation of masks , 1999, Photomask and Next Generation Lithography Mask Technology.

[11]  Alexander Tritchkov,et al.  Alternating PSM optimization using model-based OPC , 1999, Advanced Lithography.

[12]  Paul Rissman,et al.  Application of the GHOST proximity effect correction scheme to round beam and shaped beam electron lithography systems , 1985 .

[13]  Maiying Lu,et al.  Evaluation of a high-dose extended multipass gray writing system for 130-nm pattern generation , 2000, Advanced Lithography.

[14]  Byeong-soo Kim,et al.  Emergence of assist feature OPC era in sub-130-nm DRAM devices , 2001, SPIE Photomask Technology.

[15]  Frank E. Abboud,et al.  Initial benchmarking of a new electron-beam raster pattern generator for 130-100 nm maskmaking , 2000, Advanced Lithography.

[16]  Franklin M. Schellenberg,et al.  Phase aware proximity correction for advanced masks , 2000, Advanced Lithography.