Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
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Jing Guo | Leitao Liu | Yijian Ouyang | Jing Guo | Y. Ouyang | Leitao Liu | S. Kumar | S. B. Kumar
[1] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[2] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[3] J. Coleman,et al. Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials , 2011, Science.
[4] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[5] S. Lebègue,et al. Simulation of hydrogenated graphene field-effect transistors through a multiscale approach , 2010, 1004.0428.
[6] A. Splendiani,et al. Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.
[7] S. Lebègue,et al. Electronic structure of two-dimensional crystals from ab-initio theory , 2009, 0901.0440.
[8] H. Dai,et al. Narrow graphene nanoribbons from carbon nanotubes , 2009, Nature.
[9] H. Dai,et al. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors , 2008, Science.
[10] Gerhard Klimeck,et al. Bandstructure Effects in Silicon Nanowire Electron Transport , 2007, IEEE Transactions on Electron Devices.
[11] Jing Guo,et al. Effect of edge roughness in graphene nanoribbon transistors , 2007, 0712.3928.
[12] F. Guinea,et al. Coulomb blockade in graphene nanoribbons. , 2007, Physical review letters.
[13] Andre K. Geim,et al. The rise of graphene. , 2007, Nature materials.
[14] P. Kim,et al. Experimental observation of the quantum Hall effect and Berry's phase in graphene , 2005, Nature.
[15] K. Novoselov,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[16] Mark S. Lundstrom,et al. Theory of ballistic nanotransistors , 2003 .
[17] G. Scuseria,et al. Hybrid functionals based on a screened Coulomb potential , 2003 .
[18] P. Krüger,et al. Band structure of MoS 2 , MoSe 2 , and α − MoTe 2 : Angle-resolved photoelectron spectroscopy and ab initio calculations , 2001, cond-mat/0107541.
[19] P. Krüger,et al. Band structure of MoS2, MoSe2, and a-MoTe2: Angle-resolved photoelectron spectroscopy and ab initio calculations , 2001 .
[20] K. Okano,et al. Band structure of , 2000 .
[21] Mark S. Lundstrom,et al. On the performance limits for Si MOSFETs: a theoretical study , 2000 .
[22] G. Kresse,et al. From ultrasoft pseudopotentials to the projector augmented-wave method , 1999 .
[23] Burke,et al. Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.
[24] Kresse,et al. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. , 1996, Physical review. B, Condensed matter.
[25] Blöchl,et al. Projector augmented-wave method. , 1994, Physical review. B, Condensed matter.
[26] K. Natori. Ballistic metal-oxide-semiconductor field effect transistor , 1994 .
[27] A. Goldmann. Electronic structure of solids : photoemission spectra and related data , 1994 .
[28] F. Jellinek,et al. Crystal structures of tungsten disulfide and diselenide , 1987 .
[29] S. Morrison,et al. Single-layer MoS2 , 1986 .
[30] E. Fluck,et al. Gmelin handbook of inorganic and organometallic chemistry , 1975 .
[31] Robert Zannetti,et al. Landolt-bornstein, new series , 1974 .
[32] J. Wilson,et al. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties , 1969 .
[33] R. Frindt,et al. Single Crystals of MoS2 Several Molecular Layers Thick , 1966 .