Scanning tunneling microscopy of crystal dislocations in gallium arsenide.

Dislocations induced by plastic deformation have been studied. Atomically resolved images of perfect and partial dislocations penetrating the cleaved {110} surface were obtained. A Burgers-vector analysis of the observed dislocations was performed. During observation the dislocations were found to be mobile over nm distances. No band bending was observed around the dislocation cores indicating that they are essentially electrically neutral