论文信息 - A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz

A 100W Class-E GaN HEMT with 75% Drain Efficiency at 2GHz

A 100W class-E GaN HEMT device has been developed for high power and high efficiency amplifier. The authors achieved superior measurement results; drain efficiency of 75%, CW output power of 100W and associated power gain of 12dB at 2.14GHz and 50V drain bias operation with acceptable frequency band characteristics in simple class-E circuit topology

S. Sano | N. Ui

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