Formation of shallow P+-N junctions by dual Ge+/B+ implantation

[1]  R. Fair,et al.  Point defect/dopant diffusion considerations following preamorphization of silicon via Si+ and Ge+ implantation , 1988 .

[2]  C. Bresolin,et al.  BF 2 + Ion Implantation in Silicon Effects of the In‐Flight Dissociation , 1988 .

[3]  J. Wortman,et al.  Electrical properties of shallow p+‐n junctions formed by BF2 ion implantation in germanium preamorphized silicon , 1988 .

[4]  A. Ajmera,et al.  Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si , 1986 .

[5]  J. T. Chen,et al.  Furnace and Rapid Thermal Annealing of P+/n Junctions in BF 2 + ‐ Implanted Silicon , 1985 .

[6]  S. Horita,et al.  Formation of Shallow p+n Junctions by B-Ion Implantation in Si substrates with Amorphous Layers , 1985 .

[7]  A. Cartier,et al.  Low-energy BF2+ implants , 1985 .

[8]  Ronald Gronsky,et al.  Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon , 1984 .

[9]  B. Tsaur,et al.  Dual ion implantation technique for formation of shallow p+/n junctions in silicon , 1983 .

[10]  S. Takayanagi,et al.  Electrical properties of Si heavily implanted with boron molecular ions , 1982 .

[11]  S. Prussin,et al.  The effect of implant species on defect anneal kinetics part I: Silicon and phosphorus implantation , 1987 .

[12]  M. Y. Tsai,et al.  Recrystallization of implanted amorphous silicon layers. I. Electrical properties of silicon implanted with BF+2 or Si++B+ , 1979 .