Ion beam induced epitaxial regrowth and layer by layer amorphization of compound semiconductors during MeV ion implantation
暂无分享，去创建一个
[1] W. Skorupa,et al. Dose rate dependence of the ion-beam-induced epitaxial crystallization in silicon , 1993 .
[2] W. Skorupa,et al. Reduced reverse temperature of ion beam induced amorphization/ crystallization for intermittent beam irradiation of silicon? , 1993 .
[3] S. U. Campisano,et al. Layer by Layer Amorphization in Si: Temperature, Ion Mass and Flux Effects , 1993 .
[4] H. Atwater,et al. In situ analysis of irradiation-induced crystal nucleation in amorphous silicon: a “microscope” for thermodynamic processes in nucleation , 1993 .
[5] F. Priolo,et al. Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiation , 1992 .
[6] R. Elliman,et al. Ion-beam induced epitaxial crystallization of III-V compound semiconductors , 1991 .
[7] R. Elliman,et al. Solid phase epitaxial growth of amorphized InP , 1991 .
[8] F. Priolo,et al. Ion-beam-induced epitaxial crystallization and amorphization in silicon , 1990 .
[9] R. Elliman,et al. Ion beam induced epitaxy of (100) and (111) GaAs , 1989 .
[10] T. Chaki. Mechanism of Ion-Induced Solid-Phase Crystallization and Amorphization , 1989 .
[11] K. A. Jackson. A defect model for ion-induced crystallization and amorphization , 1988 .
[12] W. Brown,et al. Divacancy control of the balance between ion-beam-induced epitaxial cyrstallization and amorphization in silicon , 1988 .
[13] J. Poate,et al. Ion Implantation and Beam Processing , 1984 .