Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code
暂无分享,去创建一个
Ronald D. Schrimpf | Daniel M. Fleetwood | Elizabeth C. Auden | Robert A. Reed | Brian D. Sierawski | Robert A. Weller | Kevin M. Warren | Marcus H. Mendenhall | peixiong zhao | R. Reed | M. Mendenhall | D. Fleetwood | R. Weller | K. Warren | B. Sierawski | M. King | E. Auden | Michael P. King
[1] W. Heinrich. Calculation of LET-spectra of heavy cosmic ray nuclei at various absorber depths , 1977 .
[2] E. L. Petersen,et al. Proton Upsets in Orbit , 1983, IEEE Transactions on Nuclear Science.
[3] David M. Beazley,et al. An Extensible Compiler for Creating Scriptable Scientific Software , 2002, International Conference on Computational Science.
[4] H. Saito,et al. Heavy Ion Energy Effects in CMOS SRAMs , 2007, IEEE Transactions on Nuclear Science.
[5] M. Calvet,et al. Simulation of nucleon-induced nuclear reactions in a simplified SRAM structure: scaling effects on SEU and MBU cross sections , 2001 .
[6] Robert J. Walters,et al. Damage correlations in semiconductors exposed to gamma, electron and proton radiations , 1993 .
[7] J.W. Howard,et al. Role of heavy-ion nuclear reactions in determining on-orbit single event error rates , 2005, IEEE Transactions on Nuclear Science.
[8] Daniel M. Fleetwood,et al. Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides , 1988 .
[9] K. A. LaBel,et al. Evidence for angular effects in proton-induced single-event upsets , 2002 .
[10] Martin G. Buehler,et al. Alpha-particle sensitive test SRAMs , 1990 .
[11] J. R. Srour,et al. Displacement Damage Effects in Irradiated Semiconductor Devices , 2013, IEEE Transactions on Nuclear Science.
[12] R.A. Reed,et al. The effect of metallization Layers on single event susceptibility , 2005, IEEE Transactions on Nuclear Science.
[13] M. Igeta,et al. Comprehensive study of soft errors in advanced CMOS circuits with 90/130 nm technology , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..
[14] Robert J. Walters,et al. Proton nonionizing energy loss (NIEL) for device applications , 2003 .
[15] R. Zuleeg,et al. Energy Dependence of Proton-Induced Displacement Damage in Gallium Arsenide , 1987, IEEE Transactions on Nuclear Science.
[16] Teresa L. Cottom. Using SWIG to bind C++ to Python , 2003, Comput. Sci. Eng..
[17] M.D. Berg,et al. Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM , 2009, IEEE Transactions on Nuclear Science.
[18] H. Puchner,et al. Investigation of multi-bit upsets in a 150 nm technology SRAM device , 2005, IEEE Transactions on Nuclear Science.
[19] R. Reed,et al. Comparison of Measured Dark Current Distributions With Calculated Damage Energy Distributions in HgCdTe , 2007, IEEE Transactions on Nuclear Science.
[20] peixiong zhao,et al. Impact of Ion Energy and Species on Single Event Effects Analysis , 2007, IEEE Transactions on Nuclear Science.
[21] P. O'Neill,et al. Near-Earth Space Radiation Models , 2013, IEEE Transactions on Nuclear Science.
[22] R.A. Reed,et al. Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools , 2007, IEEE Electron Device Letters.
[23] peixiong zhao,et al. Radial characteristics of heavy-ion track structure and implications of delta-ray events for microelectronics , 2012 .
[24] R.A. Reed,et al. Application of RADSAFE to Model the Single Event Upset Response of a 0.25 $\mu$m CMOS SRAM , 2007, IEEE Transactions on Nuclear Science.
[25] R. Reed,et al. Angular dependence of multiple-bit upsets induced by protons in a 16 mbit DRAM , 2004, IEEE Transactions on Nuclear Science.
[26] G. Vizkelethy,et al. Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials , 2009, IEEE Transactions on Nuclear Science.
[27] F. Wrobel,et al. Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects , 2013, IEEE Transactions on Nuclear Science.
[28] W. G. Bennett,et al. Effects of High Electric Fields on the Magnitudes of Current Steps Produced by Single Particle Displacement Damage , 2013, IEEE Transactions on Nuclear Science.
[29] G. Gasiot,et al. Application of the TIARA Radiation Transport Tool to Single Event Effects Simulation , 2014, IEEE Transactions on Nuclear Science.
[30] J. Sempau,et al. PENELOPE-2006: A Code System for Monte Carlo Simulation of Electron and Photon Transport , 2009 .
[31] peixiong zhao,et al. Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions , 2009, IEEE Transactions on Nuclear Science.
[32] H.S. Kim,et al. Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs , 2008, IEEE Transactions on Nuclear Science.
[33] S. Incerti,et al. Geant4 developments and applications , 2006, IEEE Transactions on Nuclear Science.
[34] L Artola,et al. Impact of the Radial Ionization Profile on SEE Prediction for SOI Transistors and SRAMs Beyond the 32-nm Technological Node , 2011, IEEE Transactions on Nuclear Science.
[35] G. Marshall. Muon beams and facilities at TRIUMF , 1992 .
[36] Richard Wong,et al. Bias dependence of muon-induced single event upsets in 28 nm static random access memories , 2014, 2014 IEEE International Reliability Physics Symposium.
[37] J.D. Cressler,et al. Multiple-Bit Upset in 130 nm CMOS Technology , 2006, IEEE Transactions on Nuclear Science.
[38] C. Dozier,et al. The Use of Low Energy X-Rays for Device Testing - A Comparison with Co-60 Radiation , 1983, IEEE Transactions on Nuclear Science.
[39] Paul W. Marshall,et al. 1999 NSREC Short Course: Proton Effects and Test Issues for Satellite Designers: Displacement Effects. Section 4 , 1999 .
[40] Travis E. Oliphant,et al. Python for Scientific Computing , 2007, Computing in Science & Engineering.
[41] Wojtek Hajdas,et al. Scaling of SEU mapping and cross section, and proton induced SEU at reduced supply voltage , 1999 .
[42] D. B. Brown,et al. Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources , 1980, IEEE Transactions on Nuclear Science.
[43] Robert Ecoffet,et al. Low LET cross-section measurements using high energy carbon beam [DRAMs/SRAMs] , 1997 .
[44] M. Mendenhall,et al. A screened Coulomb scattering module for displacement damage computations in Geant4 , 2004, IEEE Transactions on Nuclear Science.
[45] David M. Beazley,et al. SWIG: An Easy to Use Tool for Integrating Scripting Languages with C and C++ , 1996, Tcl/Tk Workshop.
[46] B. Narasimham,et al. Radiation-Induced Soft Error Rates of Advanced CMOS Bulk Devices , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.
[47] J.A. Felix,et al. Radiation Effects in MOS Oxides , 2008, IEEE Transactions on Nuclear Science.
[48] R. Reed,et al. Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${\rm HfO}_{2}$ Gate Oxide , 2011, IEEE Transactions on Nuclear Science.
[49] José M. Fernández-Varea,et al. Overview of physical interaction models for photon and electron transport used in Monte Carlo codes , 2009 .
[50] S. Mashnik,et al. CEM03 and LAQGSM03?new modeling tools for nuclear applications , 2005, nucl-th/0510070.
[51] R. D. Schrimpf,et al. Single Particle Displacement Damage in Silicon , 2012, IEEE Transactions on Nuclear Science.
[52] P. J. McNulty,et al. Upset Phenomena Induced by Energetic Protons and Electrons , 1980, IEEE Transactions on Nuclear Science.
[53] Lloyd W. Massengill,et al. Cosmic and terrestrial single-event radiation effects in dynamic random access memories , 1996 .
[54] R. Gaillard,et al. Assessment and comparison of the low energy proton sensitivity in 65nm to 28nm SRAM devices , 2011, 2011 12th European Conference on Radiation and Its Effects on Components and Systems.
[55] P. Graham,et al. Radiation-induced multi-bit upsets in SRAM-based FPGAs , 2005, IEEE Transactions on Nuclear Science.
[56] peixiong zhao,et al. Simulating Nuclear Events in a TCAD Model of a High-Density SEU Hardened SRAM Technology , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.
[57] Lloyd W. Massengill,et al. Evaluating average and atypical response in radiation effects simulations , 2003 .
[58] Bin Li,et al. Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell , 2011, IEEE Transactions on Nuclear Science.
[59] J. K. Wang,et al. Electron-Induced Single-Event Upsets in Static Random Access Memory , 2013, IEEE Transactions on Nuclear Science.
[60] H. Garrett,et al. High-energy trapped particle environments at Jupiter: an update , 2005, IEEE Transactions on Nuclear Science.
[61] R. Reed,et al. Dose Enhancement and Reduction in SiO $_{2}$ and High- $\kappa$ MOS Insulators , 2010 .
[62] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .
[63] W. G. Williams,et al. The RIKEN-RAL pulsed Muon Facility , 2001 .
[64] E. Normand,et al. Heavy Ion, High-Energy, and Low-Energy Proton SEE Sensitivity of 90-nm RHBD SRAMs , 2010, IEEE Transactions on Nuclear Science.
[65] R. Koga,et al. Comparative SEU sensitivities to relativistic heavy ions , 1998 .
[66] peixiong zhao,et al. Muon-Induced Single Event Upsets in Deep-Submicron Technology , 2010, IEEE Transactions on Nuclear Science.
[67] J. Lindhard,et al. INTEGRAL EQUATIONS GOVERNING RADIATION EFFECTS. (NOTES ON ATOMIC COLLISIONS, III) , 1963 .
[68] M. Mendenhall,et al. Algorithms for the rapid computation of classical cross sections for screened Coulomb collisions , 1991 .
[69] peixiong zhao,et al. The Impact of Delta-Rays on Single-Event Upsets in Highly Scaled SOI SRAMs , 2010, IEEE Transactions on Nuclear Science.
[70] M. Mendenhall,et al. An algorithm for ab initio computation of small-angle multiple scattering angular distributions , 1994 .
[71] J. Sempau,et al. Experimental benchmarks of the Monte Carlo code penelope , 2003 .
[72] J. Baró,et al. PENELOPE: An algorithm for Monte Carlo simulation of the penetration and energy loss of electrons and positrons in matter , 1995 .
[73] D. McMorrow,et al. The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM , 2005, IEEE Transactions on Nuclear Science.
[74] N. Chatry,et al. Experimental Characterization and Simulation of Electron-Induced SEU in 45-nm CMOS Technology , 2014, IEEE Transactions on Nuclear Science.
[75] H.H.K. Tang,et al. Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells , 2007, IEEE Transactions on Nuclear Science.
[76] E. Normand. Single event upset at ground level , 1996 .
[77] S. E. Swanson,et al. Hardness Assurance Testing for Proton Direct Ionization Effects , 2011, IEEE Transactions on Nuclear Science.
[78] D. Fleetwood,et al. Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment , 1987, IEEE Transactions on Nuclear Science.
[79] F. Salvat,et al. Improved electron transport mechanics in the PENELOPE Monte-Carlo model , 2001 .
[80] C. Dozier,et al. Effect of Photon Energy on the Response of MOS Devices , 1981, IEEE Transactions on Nuclear Science.
[81] peixiong zhao,et al. Monte Carlo Simulation of Single Event Effects , 2010, IEEE Transactions on Nuclear Science.
[82] S. E. Swanson,et al. Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam , 2014, IEEE Transactions on Nuclear Science.
[83] G. Bersuker,et al. Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs , 2007, IEEE Transactions on Nuclear Science.
[84] S. Messenger,et al. Nonionizing energy loss (NIEL) for heavy ions , 1999 .
[85] M. Xapsos,et al. The Near-Earth Space Radiation Environment , 2008, IEEE Transactions on Nuclear Science.
[86] P. Oldiges,et al. Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells , 2006, IEEE Transactions on Nuclear Science.
[87] J. Maiz,et al. Characterization of multi-bit soft error events in advanced SRAMs , 2003, IEEE International Electron Devices Meeting 2003.
[88] W. Shockley. Problems related to p-n junctions in silicon , 1961 .
[89] A. L. Barry,et al. The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons , 1995 .
[90] R.A. Reed,et al. Increased Rate of Multiple-Bit Upset From Neutrons at Large Angles of Incidence , 2008, IEEE Transactions on Device and Materials Reliability.
[91] Marcus H. Mendenhall,et al. A probability-conserving cross-section biasing mechanism for variance reduction in Monte Carlo particle transport calculations , 2011, ArXiv.