The time-dependent process of oxidation of the surface of Bi2Te3 studied by x-ray photoelectron spectroscopy

The process of oxidation of the Bi2Te3 surface was investigated by x-ray photoelectron spectroscopy (XPS). The oxidized surface layer was found to have a definite thickness, with configurations where O is bonded with Bi and Te, and Bi and Te are bonded with three and four oxygens, respectively. The oxidation time dependence of the oxidized layer thickness d(t) estimated from the XPS behaved as (t-t0)1/2 when d(t) was smaller than the thickness of a single oxidized quintuple atomic layer in our oxide model and behaved as t-t1 when it was larger than that. Experimental data were compared to our oxidation process model for the layered structure with the van der Waals gap and very good agreement was found.

[1]  Ove Jepsen,et al.  Electronic structure and thermoelectric properties of bismuth telluride and bismuth selenide , 1997 .

[2]  B. Chowdari,et al.  Thermal, electrical and XPS studies of Ag2O.TeO2. P2O5 glasses , 1996 .

[3]  J. Horák,et al.  Point defects in the mixed chalcogenides Bi2 Te3-xXx(X = S, Se) , 1994 .

[4]  D. R. Penn,et al.  Calculations of electron inelastic mean free paths. III. Data for 15 inorganic compounds over the 50–2000 eV range , 1991 .

[5]  Brian R. Strohmeier,et al.  An ESCA method for determining the oxide thickness on aluminum alloys , 1990 .

[6]  M. Scrocco X-ray and electron-energy-loss spectra of Bi, Sb, Te and Bi2Te3, Sb2Te3 chalcogenides , 1990 .

[7]  P. Pécheur,et al.  Electronic structure and bonding in bismuth telluride , 1989 .

[8]  Wu,et al.  Determination of the local effect of impurities on the charge-density-wave phase in TaS2 by scanning tunneling microscopy. , 1988, Physical review letters.

[9]  P. Thomas The crystal structure and absolute optical chirality of paratellurite, α-TeO2 , 1988 .

[10]  T. Chassé,et al.  X‐Ray photoelectron valence band spectra from semiconductors Bi2Te3 and Sb2Te3 , 1985 .

[11]  Z. Hurych,et al.  Synchrotron-radiation photoemission study of the V–VI layered compounds Bi2Te3, Bi2Se3, Sb2 Te3 and Sb2Te2Se , 1982 .

[12]  A. Proctor,et al.  Data analysis techniques in x-ray photoelectron spectroscopy , 1982 .

[13]  H. A. Harwig On the Structure of Bismuthsesquioxide: The α, β, γ, and δ-phase , 1978 .

[14]  J. Rabalais,et al.  X-ray photoelectron spectra and electronic structure of Bi2X3 (X = O, S, Se, Te) , 1977 .

[15]  D. A. Shirley,et al.  High-Resolution X-Ray Photoemission Spectrum of the Valence Bands of Gold , 1972 .

[16]  A. S. Grove,et al.  General Relationship for the Thermal Oxidation of Silicon , 1965 .