论文信息 - AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition - 字舞流文

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition

Lin-An Yang | Y. Hao | Xiao-hua Ma | Q. Feng | Jincheng Zhang | Kai Zhang | Wei Mao | Yong-Ming Chang | Zhi-wei Bi | Zhi-Yuan Gao | Hong-xia Liu | Nan Mei | Zhi-yuan Gao