Virtual optical experiments. Part I. Modeling the measurement process.

In recent years, internal laser probing techniques that exploit the electro-optical and the thermo-optical effects have been introduced. Space-resolved and time-resolved measurements of charge-carrier and temperature distributions in the interior of semiconductor samples have thus become possible. For a profound analysis and the optimization of these measurement techniques, a physically rigorous model for simulating the entire measurement process is presented. The model includes the electrothermal device simulation of the sample's operating condition, the calculation of the resulting refractive-index modulations, the simulation of wave propagation through the device under test, the imaging lenses and aperture holes, and the simulation of the detector response. As an essential part of this model, a numerically efficient algorithm for simulating wave propagation in large computational domains has been developed. The decisive step is introduction of a suitably chosen set of computational variables that allows a significantly coarser discretization width without loss of accuracy.

[1]  Andrzej J. Strojwas,et al.  Modeling optical microscope images of integrated circuit structures , 1991 .

[2]  Paul Lagasse,et al.  Application of propagating beam methods to electromagnetic and acoustic wave propagation problems: A review , 1987 .

[3]  E. Nordlander,et al.  A time-resolved optical system for spatial characterization of the carrier distribution in a gate turn-off thyristor (GTO) , 1990 .

[4]  Siegfried Selberherr,et al.  Rigorous three-dimensional photoresist exposure and development simulation over nonplanar topography , 1997, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[5]  Ivo Rendina,et al.  Thermo-optic effect exploitation in silicon microstructures , 1998 .

[6]  C. Burckhardt Diffraction of a Plane Wave at a Sinusoidally Stratified Dielectric Grating , 1966 .

[7]  K. Yee Numerical solution of initial boundary value problems involving maxwell's equations in isotropic media , 1966 .

[8]  Ivo Rendina,et al.  A temperature all-silicon micro-sensor based on the thermo-optic effect , 1997 .

[9]  R Fisher,et al.  Design of Experiments , 1936 .

[10]  Gerhard K. M. Wachutka,et al.  Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling , 1990, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[11]  E. D. Wolley,et al.  Study of charge dynamics in high speed power devices using free carrier absorption measurements , 1976, 1976 International Electron Devices Meeting.

[12]  N. Amer,et al.  Photothermal investigation of transport in semiconductors: Theory and experiment , 1986 .

[13]  Paul Lagasse,et al.  Beam-propagation method: analysis and assessment , 1981 .

[14]  M. Feit,et al.  Light propagation in graded-index optical fibers. , 1978, Applied optics.

[15]  R. Z. Yahel,et al.  Numerical simulation of laser beam propagation in three-dimensional random media: beam splitting and patch formation , 1992 .

[16]  H. B. Briggs,et al.  Absorption of Infrared Light by Free Carriers in Germanium , 1953 .

[17]  Gerhard Wachutka,et al.  Virtual optical experiments. Part II. Design of experiments. , 2003, Journal of the Optical Society of America. A, Optics, image science, and vision.

[18]  Christian Hafner Beiträge zur Berechnung der Ausbreitung elektromagnetischer Wellen in zylindrischen Strukturen mit Hilfe des "Point-Matching"- Verfahrens , 1980 .

[19]  N. Harrick Use of Infrared Absorption to Determine Carrier Distribution in Germanium and Surface Recombination Velocity , 1956 .

[20]  G. Deboy,et al.  Absolute measurement of transient carrier concentration and temperature gradients in power semiconductor devices by internal IR-laser deflection , 1996 .

[21]  Erich Gornik,et al.  A study of backside laser-probe signals in MOSFETs , 1996 .

[22]  Allen Taflove,et al.  Theory and application of radiation boundary operators , 1988 .

[23]  P. Habaš,et al.  Time-Domain Characterization of Lattice Heating in Power VDMOSFETs by Means of an Interferometric Laserprobe Technique , 1996, ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference.

[24]  Kenneth T. V. Grattan,et al.  Simultaneous strain and temperature measurements in composites using extrinsic Fabry–Perot interferometric and intrinsic rare-earth doped fiber sensors , 2000 .

[25]  Michael S. Yeung,et al.  Modeling High Numerical Aperture Optical Lithography , 1988, Advanced Lithography.

[26]  R. Cooper,et al.  Measurement of charge-carrier behaviour in PIN diodes using a laser technique , 1978 .