论文信息 - X3D: 3D X-ray lithography and development simulation for MEMS

X3D: 3D X-ray lithography and development simulation for MEMS

We report a novel simulation tool covering the complete process of X-ray lithography. Sub-steps of the procedure are mask generation, transient exposure, and transient resist dissolution. For the first time, accurate monolithic simulation of exposure and development for device-sized domains is possible. This provides the means for design and process verification and optimization for today's complex moving mask systems, including those using multiple simultaneously moved masks.

S. Hafizovic | O. Tabata | Y. Hirai | J.G. Korvink

[1] O. Tabata,et al. 3D fabrication by moving mask deep X-ray lithography (M/sup 2/DXL) with multiple stages , 2002, Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.02CH37266).

[2] James A. Sethian,et al. Level Set Methods and Fast Marching Methods , 1999 .

[3] Mumit Khan,et al. Modeling Image Formation in Layered Structures: Application to X-ray Lithography , 1998 .

[4] Pascal Meyer,et al. DoseSim: Microsoft-Windows graphical user interface for using synchrotron x-ray exposure and subsequent development in the LIGA process , 2003 .