论文信息 - Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers

Continuously tunable 1.5μm multiple-quantum-well GaInAs/GaInAsP distributed-Bragg-reflector lasers

We demonstrate improved performance in tunable distributed-Bragg-reflector lasers using GaInAs/GaInAsP multiple-quantum-well active layers. We observe linewidths as low as 1.9 MHz, differential quantum efficiencies as large as 33%/front facet at 1.5μm, and rapid electronic access to all frequencies throughout a 1000GHz range.

[1] K. Vahala,et al. Measurement of the linewidth enhancement factor α of semiconductor lasers , 1983 .

[2] Masahiro Asada,et al. Gain and intervalence band absorption in quantum-well lasers , 1984 .

[3] John E. Bowers,et al. Low internal loss separate confinement heterostructure InGaAs/InGaAsP quantum well laser , 1987 .

[4] Gregory Raybon,et al. Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth , 1988 .