64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology

In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.

[1]  Huei Wang,et al.  A Low-Power 114-GHz Push–Push CMOS VCO Using LC Source Degeneration , 2007, IEEE Journal of Solid-State Circuits.

[2]  R. Lachner,et al.  A SiGe Monolithically Integrated 278 GHz Push-Push Oscillator , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[3]  Andreas Trasser,et al.  Fully Integrated Millimeter-Wave VCO with 32% Tuning Range , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[4]  A. Schuppen,et al.  An 80 GHz SiGe production technology , 2001 .

[5]  Y. Baeyens,et al.  Highly Efficient Harmonically Tuned InP D-HBT Push-Push Oscillators Operating up to 287 GHz , 2007, 2007 IEEE/MTT-S International Microwave Symposium.