SEM Investigation of the electrical properties of silicon ribbons

[1]  Deren Yang,et al.  Electron-beam-induced current study of grain boundaries in multicrystalline Si , 2007 .

[2]  V. Kveder,et al.  Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties , 2005 .

[3]  E. Yakimov,et al.  Annealing effect on the electrical activity of extended defects in plastically deformed p‐Si with low dislocation density , 2005 .

[4]  E. Yakimov,et al.  Temperature dependence of electron beam induced current contrast of deformation-induced defects in silicon , 2004 .

[5]  S. Binetti,et al.  Electrical and Optical Properties of Dislocations Generated under Pure Conditions , 2003 .

[6]  H. Gottschalk Precipitates in Ribbon Grown Solar Silicon , 2000 .

[7]  Jeff Bailey,et al.  Efficiency-limiting defects in silicon solar cell material , 1996 .

[8]  E. Weber,et al.  Precipitation of Iron in Polycrystalline Silicon , 1993 .

[9]  B. Epelbaum,et al.  Development of the Two-Shaping-Elements (TSE) method for silicon sheet growth , 1990 .

[10]  H. Lange,et al.  Ribbon Growth on Substrate (RGS) — A new approach to high speed growth of silicon ribbons for photovoltaics , 1990 .

[11]  V. A. Tatarchenko,et al.  Shaped crystal growth using two shaping elements (TSE): Physical features of the method and its application to silicon/carbon composite materials production , 1987 .

[12]  H. Strunk,et al.  First and second order twin boundaries in edge defined film growth silicon ribbon , 1982 .

[13]  T. Ciszek,et al.  Structural and electrical charaterization of crystallographic defects in silicon ribbons , 1980 .

[14]  C. Donolato A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity , 1992 .