论文信息 - Vertical channel devices enabled by through silicon via (TSV) technologies

Vertical channel devices enabled by through silicon via (TSV) technologies

Novel device structures with vertical channels gated by TSV's are demonstrated. The unique device structure is realized in a standard TSV process flow, without new material systems or processes. They can be used for both characterizing the TSV process as well as enable new functions. They can be easily integrated into product designs thus enabling field monitoring.

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