670 nm tapered lasers and amplifier with output powers P ⩾ 1 W and nearly diffraction limited beam quality

High-brightness tapered lasers and amplifiers at 670 nm with output powers up to 1 W and nearly diffraction limited beam quality were realised. The devices consist of a 750 &mgr;m long straight section and a 1250 &mgr;m long tapered section. Devices with a taper angle of 2°, 3° and 4° were manufactured. The material quality was studied in a long-term test for ridge-waveguide lasers. Devices with 7.5 &mgr;m ridge width show reliable operation at 100 mW output power over more than 10000 h. At a temperature of 15°C a tapered lasers with an angle of 4° reached an output power of 1 W at a current of 2.1 A. The highest conversion efficiency for this device was 24%, the peak wavelength of the emission was 668 nm and the spectral width was smaller than 0.2 nm. The beam propagation factor was M2 = 1.7 (1/e2) and M2 = 3.0 (second moments). At 500 mW output power, master-oscillator power-amplifier (MOPA) devices showed also a nearly diffraction limited beam quality with M2 < 1.5 and reliable operation with degradation rates as low as 7x10-6 h-1 over 1200 h. The spectral line-width in this arrangement is determined by the master oscillator and is suitable for high-resolution spectroscopy.

[1]  Yongjoo Rhee,et al.  Hyperfine structure of 147,149Sm measured using saturated absorption spectroscopy in combination with resonance-ionization mass spectroscopy , 2003 .

[2]  N. Linder,et al.  900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm , 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..

[3]  M. Weyers,et al.  3 W - Broad Area Lasers and 12 W - Bars with Conversion Efficiencies up to 40% at 650 nm , 2006, 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..

[4]  G. Erbert,et al.  Mounting of high power laser diodes on boron nitride heat sinks using an optimized Au/Sn metallurgy , 2001 .

[5]  A. Rosen,et al.  High-power semiconductor red laser arrays for use in photodynamic therapy , 2005, IEEE Journal of Selected Topics in Quantum Electronics.

[6]  Markus Pessa,et al.  High-power 600-nm-range lasers grown by solid-source molecular beam epitaxy , 1999, Photonics West.

[7]  M. Praeger,et al.  A broad emitter diode laser system for lithium spectroscopy , 1998 .

[8]  Gregory Deane Severn,et al.  Argon ion laser-induced fluorescence with diode lasers , 1998 .

[9]  K. Onozawa,et al.  High-power and high-temperature operation of Mg-doped AlGaInP-based red laser diodes , 2004, IEEE Journal of Quantum Electronics.

[10]  M. Weyers,et al.  High-power red laser diodes grown by MOVPE , 2007 .

[11]  Bo Lu,et al.  High-power and diffraction-limited red lasers , 2000, Photonics West - Optoelectronic Materials and Devices.

[12]  U. Zeimer,et al.  Novel passivation process for the mirror facets of Al-free active-region high-power semiconductor diode lasers , 2005, IEEE Photonics Technology Letters.