Silicio Ultradelgado Empobrecido en Aislante MOSFET: una simulación basada en COMSOL Multiphysics ®

We use the MOS transistor model from COMSOL [1] as a template to develop our own UT-FD-SOI-MOSFET with an ultra-thin geometry (Channel thickness = 10nm). SOI-MOSFETs are used to reduce short channel effect problems in actual MOSFET structures and to enable further miniaturization. Our model shows a linear dependence of the front Threshold Voltage with the Back Gate Voltage, which has been reported experimentally by [2] and theoretically by [3].