Large signal modeling of switchable ferroelectric FBARs

The large signal modeling procedure for intrinsically switchable film bulk acoustic resonators (FBARs) based on thin film barium strontium titanate (BST) is presented. Thin film BST exhibits electric field dependent permittivity and electric field induced piezoelectricity. In this paper, a large signal model which accurately describes the DC bias voltage as well as RF power dependent performance of BST FBARs is presented. Large signal simulation results obtained from this model at different bias voltages and RF power levels show good agreement with the measurement results.

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