论文信息 - Oxide Thinning in Shallow Trench Isolation

Oxide Thinning in Shallow Trench Isolation

Aim of this work is to study the thinning of thick HV gate oxides in flash and embedded flash processes due to the shallow trench isolation (STI) induced stress on oxide growth

[1] G. Ghidini,et al. Anomalous gate oxide conduction on isolation edges: analysis and process optimization , 2003, Microelectron. Reliab..

[2] E. P. EerNisse,et al. Viscous flow of thermal SiO2 , 1977 .

[3] D. Uhlmann,et al. Effects of High Pressure on Amorphous Polymers. II. Annealing of Densified Polymethyl Methacrylate , 1971 .

[4] M. Tagawa,et al. Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon , 1993 .

[5] I. De Wolf,et al. Process‐induced mechanical stress in isolation structures studied by micro‐Raman spectroscopy , 1993 .