A High-Power Low-Distortion GaAs HBT Power Amplifier with 3.3 V Supply for 5-6 GHz Broadband Wireless Applications
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K. Sakuno | H. Kawamura | T. Oka | M. Hasegawa | M. Hirata | Y. Amano | Y. Ishimaru
[1] C. Weitzel,et al. RF power amplifiers for wireless communications , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.
[2] P. Heide,et al. LTCC triplexer for WiMax applications , 2005, 2005 European Microwave Conference.
[3] K. Vavelidis,et al. A dual-band 4.9-5.95 GHz, 2.3-2.5 GHz, 0.18 /spl mu/m CMOS transceiver for 802.11 a/b/g-802.16d/e , 2006, 2006 IEEE Radio and Wireless Symposium.
[4] K. Kagoshima,et al. High-performance InGaP power HBT technologies for wireless applications , 2003, 2003 International Symposium on Compound Semiconductors.
[5] Christopher Bowick. RF Circuit Design , 1982 .
[6] K. Kagoshima,et al. A High Efficiency InGaP/GaAs HBT Power Amplifier MMIC for the 5GHz Wireless-LAN Application , 2002, 2002 32nd European Microwave Conference.
[7] K. Sakuno,et al. Enhanced linearity and efficiency of HBT power amplifiers for 5-GHz wireless-LANs , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..
[8] S. C. Cripps,et al. RF Power Amplifiers for Wireless Communications , 1999 .