Monolithically integrated long wavelength optical receiver OEICs using InAlAs/InGaAs heterojunction MESFETs (HFETs)

Monolithic optical receiver OEICs have been successfully fabricated on 2'' diameter InP substrates by integrating and InGaAs pin photodetector with a simple InAlAs/InGaAs hetrojunction MESFET (HFET) structure. Transimpedance receivers based on 1.5 μm gate length FETs exhibited 3.5 GHz bandwith and 19.9 pA/√(Hz) averaged noise current. Circuit functional yield as high as 67% has been achieved