A new PiN diode modelling approach for power electronic PSPICE simulations

A new PSPICE subcircuit model for power PiN diodes is presented. The model is based on an equivalent circuit representation for the base region, obtained by rational approximation of Laplace transform solution of the ambipolar diffusion equation. Good agreement has been obtained by comparing the results of the proposed PIN diode model with numerical device simulations.<<ETX>>

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