In Situ Atom Scale Visualization of Domain Wall Dynamics in VO2 Insulator-Metal Phase Transition

A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires visualization of domain wall dynamics in real space. Here, domain wall dynamics in VO2 insulator-metal phase transition was observed directly by in situ TEM at atom scale. Experimental results depict atom scale evolution of domain morphologies and domain wall exact positions in (202) and (040) planes referring to rutile structure at 50°C. In addition, microscopic mechanism of domain wall dynamics and accurate lattice basis vector relationship of two domains were investigated with the assistance of X-ray diffraction, ab initio calculations and image simulations. This work offers a route to atom scale tunable heterostructure device application.

[1]  Junhao Chu,et al.  The study of optimal oxidation time and different temperatures for high quality VO2 thin film based on the sputtering oxidation coupling method , 2011 .

[2]  Francesca Rossi,et al.  STEM_CELL: a software tool for electron microscopy: part 2--analysis of crystalline materials. , 2013, Ultramicroscopy.

[3]  J C Grossman,et al.  Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams. , 2009, Nature nanotechnology.

[4]  Byung-Gyu Chae,et al.  Memory Metamaterials , 2009, Science.

[5]  S. Ramanathan,et al.  Evolution of local work function in epitaxial VO2 thin films spanning the metal-insulator transition , 2012 .

[6]  Shriram Ramanathan,et al.  Work function of vanadium dioxide thin films across the metal-insulator transition and the role of surface nonstoichiometry. , 2011, ACS applied materials & interfaces.

[7]  Ramamoorthy Ramesh,et al.  Large kinetic asymmetry in the metal-insulator transition nucleated at localized and extended defects , 2011 .

[8]  Marin Alexe,et al.  Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films. , 2008, Nature materials.

[9]  Uwe Bauer,et al.  Voltage-controlled domain wall traps in ferromagnetic nanowires. , 2013, Nature nanotechnology.

[10]  R. Lerner,et al.  Activation Volumes for Solid-Solid Transformations in Nanocrystals , 2001, Science.

[11]  C. Colliex,et al.  Role of epitaxial microstructure, stress and twin boundaries in the metal–insulator transition mechanism in VO2/Al2O3 heterostructures , 2013 .

[12]  James F. Scott,et al.  Domain wall nanoelectronics , 2012 .

[13]  Diamond nanostructures: isotopes for nanoelectronic devices. , 2009, Nature nanotechnology.

[14]  W. Pickett,et al.  Tight-binding modeling and low-energy behavior of the semi-Dirac point. , 2009, Physical review letters.

[15]  Hongkun Park,et al.  Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams. , 2007, Nano letters.

[16]  V. Lobastov,et al.  Ultrafast electron microscopy (UEM): four-dimensional imaging and diffraction of nanostructures during phase transitions. , 2007, Nano letters.

[17]  Y. Muraoka,et al.  Photoemission study of the metal-insulator transition inVO2/TiO2(001): Evidence for strong electron-electron and electron-phonon interaction , 2004 .

[18]  Stuart S. P. Parkin,et al.  Control of the metal–insulator transition in vanadium dioxide by modifying orbital occupancy , 2013, Nature Physics.

[19]  David H. Cobden,et al.  Measurement of a solid-state triple point at the metal–insulator transition in VO2 , 2013, Nature.

[20]  Enge Wang,et al.  Domain Dynamics During Ferroelectric Switching , 2011, Science.

[21]  Chang-Beom Eom,et al.  Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching , 2013, Nature Communications.

[22]  Heng Ji,et al.  Hydrogen stabilization of metallic vanadium dioxide in single-crystal nanobeams , 2012 .

[23]  Roger Proksch,et al.  Interplay between ferroelastic and metal-insulator phase transitions in strained quasi-two-dimensional VO2 nanoplatelets. , 2010, Nano letters.

[24]  Yijia Gu,et al.  Extended mapping and exploration of the vanadium dioxide stress-temperature phase diagram. , 2010, Nano letters.

[25]  François Léonard,et al.  Electrical contacts to one- and two-dimensional nanomaterials. , 2011, Nature nanotechnology.

[26]  A. Rappe,et al.  Nucleation and growth mechanism of ferroelectric domain-wall motion , 2007, Nature.

[27]  Allen,et al.  VO2: Peierls or Mott-Hubbard? A view from band theory. , 1994, Physical review letters.

[28]  H. Shigekawa,et al.  Optical doping: active control of metal-insulator transition in nanowire. , 2008, Nano letters.

[29]  Peihong Zhang,et al.  VO2: Orbital competition, magnetism, and phase stability , 2012 .

[30]  S. Cheong,et al.  Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO3. , 2010, Nature materials.

[31]  M. Mochizuki,et al.  Current-induced skyrmion dynamics in constricted geometries. , 2013, Nature nanotechnology.

[32]  Ivan K Schuller,et al.  Role of thermal heating on the voltage induced insulator-metal transition in VO2. , 2013, Physical review letters.

[33]  Stuart S. P. Parkin,et al.  Jaewoo Jeong Induced Oxygen Vacancy Formation − by Electric Field 2 Suppression of Metal-Insulator Transition in VO , 2014 .

[34]  Kang L. Wang,et al.  Direct imaging of thermally driven domain wall motion in magnetic insulators. , 2013, Physical review letters.

[35]  D. Muller,et al.  Direct observation of defect-mediated cluster nucleation , 2002, Nature materials.

[36]  Kunio Okimura,et al.  Photo-induced lattice softening of excited-state VO2 , 2011 .

[37]  Young-soo Park,et al.  Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory , 2007 .

[38]  Xin Zhang,et al.  Terahertz-field-induced insulator-to-metal transition in vanadium dioxide metamaterial , 2012, Nature.

[39]  H. Ehrke,et al.  Coherent structural dynamics and electronic correlations during an ultrafast insulator-to-metal phase transition in VO2. , 2007, Physical review letters.

[40]  Burke,et al.  Generalized Gradient Approximation Made Simple. , 1996, Physical review letters.

[41]  V. Eyert,et al.  VO2: a novel view from band theory. , 2011, Physical review letters.

[42]  Miyano,et al.  Visualization of the local insulator-metal transition in Pr0.7Ca0. 3MnO3 , 1998, Science.

[43]  Junhao Chu,et al.  The extremely narrow hysteresis width of phase transition in nanocrystalline VO2 thin films with the flake grain structures , 2012 .

[44]  Ziyu Wu,et al.  Understanding the nature of the kinetic process in a VO2 metal-insulator transition. , 2010, Physical review letters.

[45]  Sergei V. Kalinin,et al.  Conduction at domain walls in oxide multiferroics. , 2009, Nature Materials.

[46]  M. Kawasaki,et al.  Collective bulk carrier delocalization driven by electrostatic surface charge accumulation , 2012, Nature.

[47]  Eugenie Samuel Reich.  Metal oxide chips show promise , 2013, Nature.

[48]  A I Lichtenstein,et al.  Dynamical singlets and correlation-assisted Peierls transition in VO2. , 2005, Physical review letters.

[49]  Marin Alexe,et al.  Direct Observation of Continuous Electric Dipole Rotation in Flux-Closure Domains in Ferroelectric Pb(Zr,Ti)O3 , 2011, Science.

[50]  Xinfeng He,et al.  A novel sputtering oxidation coupling (SOC) method to fabricate VO2 thin film , 2010 .

[51]  Martin Dressel,et al.  Electrodynamics of correlated electron materials , 2011, 1106.2309.

[52]  Ahmed H. Zewail,et al.  4D Visualization of Transitional Structures in Phase Transformations by Electron Diffraction , 2007, Science.

[53]  Yimin A. Wu,et al.  Dynamics of single Fe atoms in graphene vacancies. , 2013, Nano letters.

[54]  J. Fuhrmann.  Advanced Computing In Electron Microscopy , 2016 .